상세정보
학술지
High-Power Continuous-Wave Operation of InP-Based InAs Quantum-Dot Laser with Dot-in-a-Well Structure and Strain-Modulating Layer
- 발행일
- 201411
- 출처
- Laser Physics Letters, v.11 no.11, pp.1-6
- ISSN
- 1612-2011
- 출판사
- WILEY-VCH Verlag GmbH & Co. KGaA
- 협약과제
- 11MB1300, 반도체 나노구조를 이용한 펌핑용 10 W급 광원기술, 송정호
- 초록
- We report continuous-wave (CW) operation of an InAs/InGaAsP quantum-dot (QD) heterostructure laser diode (LD) with an output power of 1.1 W at room temperature. This is the first observation on the laser output over 1 W from InAs QD-LDs fabricated on InP substrates. Also, the high-power lasing emission was successfully achieved at up to 60 °C. The improvement in the lasing characteristics can be attributed to enhancement in modal gain of QD-LDs because of the increase in spatial carrier confinement around localized QD states by using a dot-in-a-well structure and a thin GaAs strain-modulating layer.
- KSP 제안 키워드
- Continuous-wave (CW) operation, High power, InAs QDs, InP-based, Laser diode(LD), Laser output, Lasing characteristics, Output power, Quantum Dot(QD), Room-temperature, Spatial carrier