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Journal Article
High-Power Continuous-Wave Operation of InP-Based InAs Quantum-Dot Laser with Dot-in-a-Well Structure and Strain-Modulating Layer
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- Authors
- Byounggu Jo, Cheul-Ro Lee, Jin Soo Kim, Won Seok Han, Jung Ho Song, Jang-Hee Choi, Jae-Hyun Ryou, Jin Hong Lee, Jae-Young Leem
- Issue Date
- 2014-11
- Citation
- Laser Physics Letters, v.11, no.11, pp.1-6
- ISSN
- 1612-2011
- Publisher
- WILEY-VCH Verlag GmbH & Co. KGaA
- Language
- English
- Type
- Journal Article
- Abstract
- We report continuous-wave (CW) operation of an InAs/InGaAsP quantum-dot (QD) heterostructure laser diode (LD) with an output power of 1.1 W at room temperature. This is the first observation on the laser output over 1 W from InAs QD-LDs fabricated on InP substrates. Also, the high-power lasing emission was successfully achieved at up to 60 °C. The improvement in the lasing characteristics can be attributed to enhancement in modal gain of QD-LDs because of the increase in spatial carrier confinement around localized QD states by using a dot-in-a-well structure and a thin GaAs strain-modulating layer.
- KSP Keywords
- Continuous-wave (CW) operation, High power, InAs QDs, InP-based, Laser diode, Laser output, Lasing characteristics, Output power, Quantum dot(Qdot), Quantum dot laser(QDL), Room temperature