ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 High-Power Continuous-Wave Operation of InP-Based InAs Quantum-Dot Laser with Dot-in-a-Well Structure and Strain-Modulating Layer
Cited 1 time in scopus Download 0 time Share share facebook twitter linkedin kakaostory
저자
조병구, 이철로, 김진수, 한원석, 송정호, 최장희, 류재현, 이진홍, 임재형
발행일
201411
출처
Laser Physics Letters, v.11 no.11, pp.1-6
ISSN
1612-2011
출판사
WILEY-VCH Verlag GmbH & Co. KGaA
DOI
https://dx.doi.org/10.1088/1612-2011/11/11/115815
협약과제
11MB1300, 반도체 나노구조를 이용한 펌핑용 10 W급 광원기술, 송정호
초록
We report continuous-wave (CW) operation of an InAs/InGaAsP quantum-dot (QD) heterostructure laser diode (LD) with an output power of 1.1 W at room temperature. This is the first observation on the laser output over 1 W from InAs QD-LDs fabricated on InP substrates. Also, the high-power lasing emission was successfully achieved at up to 60 °C. The improvement in the lasing characteristics can be attributed to enhancement in modal gain of QD-LDs because of the increase in spatial carrier confinement around localized QD states by using a dot-in-a-well structure and a thin GaAs strain-modulating layer.
키워드
dot-in-a-well structure, high-power laser diode, InAs quantum dot, strain-modulating layer
KSP 제안 키워드
Continuous-wave (CW) operation, High-power laser diode, InAs QDs, InAs Quantum dots, InP-based, Laser diode(LD), Laser output, Lasing characteristics, Output power, Quantum Dot(QD), Room-temperature