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Conference Paper
Low Temperature Fabrication of Aqueous Solution Processed Flexible Indium Oxide Transparent Thin-Film Transistors on a Plastic Substrate
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- Authors
- Young Hwan Hwang, Jin-Suk Seo, Yun Yong Nam, Min Ki Ryu, Sang-Hee Ko Park, Byeong- Soo Bae
- Issue Date
- 2012-08
- Citation
- International Meeting on Information Display (IMID) 2012, pp.681-682
- Language
- English
- Type
- Conference Paper
- Abstract
- An aqueous route enables the fabrication of indium oxide (IO) TFT at low temperature, below 200 . The optimized IO TFT exhibits a mobility of 3.64 cm 2 V -1 s -1 with 200annealing. The vacuum and humid O 2 post annealing activates the IO TFT even with 125 annealing due to the effective removal of impurities and oxidation. The flexible transparent IO TFT is fabricated on a PEN substrate and the device exhibits mobility over 4 cm 2 V -1 s -1 and S.S. 210 mV/dec with a turn-on voltage around 0 V. Also, the detailed stbility studied of the flexible transparent TFT will be demostrated.
- KSP Keywords
- Low temperature fabrication, O 2, Plastic substrate, Post-annealing, Thin-Film Transistor(TFT), Transparent TFT, Turn-on voltage, aqueous route, aqueous solution processed, flexible and transparent, indium oxide