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Journal Article
Improved Surface Passivation Using Dual-Layered a-Si:H for Silicon Heterojunction Solar Cells
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- Issue Date
- 2014-01
- Citation
- ECS Solid State Letters, v.3, no.3, pp.P33-P36
- ISSN
- 2162-8742
- Publisher
- Electrochemical Society (ECS)
- Language
- English
- Type
- Journal Article
- Abstract
- Silicon heterojunction solar cells require high quality surface passivation to enhance the device performance. In this study, duallayered hydrogenated amorphous silicon (a-Si:H) deposited at different hydrogen dilution is investigated for the improvement of surface passivation. Dual-layered a-Si:H is functionalized as smooth interfacial and dense capping layers. As-deposited dual-layered passivation shows 33.4% enhancement of the minority carrier lifetime from quasi-steady-state photo-conductance measurements up to 197.6 μs comparing to 148.1 μs of single-layered a-Si:H at 1015 103 injection level. The improved effective lifetime and implied open circuit voltage of dual-layered passivation are 401.5 μs and 712 mV with post-annealing process.© 2014 The Electrochemical Society.
- KSP Keywords
- As-deposited, Capping layer, Conductance measurements, Effective lifetime, Heterojunction solar cells(SHJ), Hydrogen dilution, Hydrogenated amorphous silicon, Injection level, Open circuit voltage(OCV), Post-annealing process, Silicon heterojunction solar cells