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Journal Article Improved Surface Passivation Using Dual-Layered a-Si:H for Silicon Heterojunction Solar Cells
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Authors
Kyu-Sung Lee, Chang Bong Yeon, Sun Jin Yun, Kwang Hoon Jung, Jung Wook Lim
Issue Date
2014-01
Citation
ECS Solid State Letters, v.3, no.3, pp.P33-P36
ISSN
2162-8742
Publisher
Electrochemical Society (ECS)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1149/2.001404ssl
Project Code
12MB4800, Development of manufacturing technology of 23% efficiency, $0.6/Wp production cost hybrid structured crystalline silicon solar cell and module, Lim Jungwook
Abstract
Silicon heterojunction solar cells require high quality surface passivation to enhance the device performance. In this study, duallayered hydrogenated amorphous silicon (a-Si:H) deposited at different hydrogen dilution is investigated for the improvement of surface passivation. Dual-layered a-Si:H is functionalized as smooth interfacial and dense capping layers. As-deposited dual-layered passivation shows 33.4% enhancement of the minority carrier lifetime from quasi-steady-state photo-conductance measurements up to 197.6 μs comparing to 148.1 μs of single-layered a-Si:H at 1015 103 injection level. The improved effective lifetime and implied open circuit voltage of dual-layered passivation are 401.5 μs and 712 mV with post-annealing process.© 2014 The Electrochemical Society.
KSP Keywords
As-deposited, Capping layer, Conductance measurements, Effective lifetime, Injection level, Open circuit voltage(VOC), Post-annealing process, Silicon heterojunction solar cells, Surface passivation, a-Si:H, device performance