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학술지 Improved Surface Passivation Using Dual-Layered a-Si:H for Silicon Heterojunction Solar Cells
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저자
이규성, 연창봉, 윤선진, 정광훈, 임정욱
발행일
201401
출처
ECS Solid State Letters, v.3 no.3, pp.P33-P36
ISSN
2162-8742
출판사
Electrochemical Society (ECS)
DOI
https://dx.doi.org/10.1149/2.001404ssl
협약과제
12MB4800, 초고효율 소자구조 및 저가 공정기술을 결합한 융합형 태양 전지 개발, 임정욱
초록
Silicon heterojunction solar cells require high quality surface passivation to enhance the device performance. In this study, duallayered hydrogenated amorphous silicon (a-Si:H) deposited at different hydrogen dilution is investigated for the improvement of surface passivation. Dual-layered a-Si:H is functionalized as smooth interfacial and dense capping layers. As-deposited dual-layered passivation shows 33.4% enhancement of the minority carrier lifetime from quasi-steady-state photo-conductance measurements up to 197.6 μs comparing to 148.1 μs of single-layered a-Si:H at 1015 103 injection level. The improved effective lifetime and implied open circuit voltage of dual-layered passivation are 401.5 μs and 712 mV with post-annealing process.© 2014 The Electrochemical Society.
KSP 제안 키워드
As-deposited, Capping layer, Conductance measurements, Effective lifetime, Injection level, Open circuit voltage(VOC), Post-annealing process, Silicon heterojunction solar cells, Surface passivation, a-Si:H, device performance