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Journal Article
Low-Voltage-Operated Organic One-Time Programmable Memory Using Printed Organic Thin-Film Transistors and Antifuse Capacitors
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- Authors
- Soon-Won Jung, Bock Soon Na, Chan Woo Park, Jae Bon Koo
- Issue Date
- 2014-11
- Citation
- Journal of Nanoscience and Nanotechnology, v.14, no.11, pp.8167-8170
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP)
- Language
- English
- Type
- Journal Article
- Abstract
- We demonstrate an organic one-time programmable memory cell formed entirely at plasticcompatible temperatures. All the processes are performed at below 130 - C. Our memory cell consists of a printed organic transistor and an organic capacitor. Inkjet-printed organic transistors are fabricated by using high-k polymer dielectric blends comprising poly(vinylidenefluoridetrifluoroethylene) [P(VDF-TrFE)] and poly(methyl methacrylate) (PMMA) for low-voltage operation. P(NDI2OD-T2) transistors have a high field-effect mobility of 0.2 cm2 /Vs and a low operation gate voltage of less than 10 V. The operation voltage effectively decreases owing to the high permittivity of the P(VDF-TrFE):PMMA blended film. The data in the memory cell are programmed by electrically breaking the organic capacitor. The organic capacitor acts like an antifuse capacitor,because it is initially open, and it becomes permanently short-circuited by applying a high voltage. The organic memory cells are programmed with 4 V, and they are read out with 2 V. The memory data are read out by sensing the current in the memory cell. The printed organic one-time programmable memory is suitable for applications storing small amount of data, such as low-cost radio-frequency identification (RFID) tag.
- KSP Keywords
- Gate voltage, High Voltage, High permittivity, High-k polymer dielectric, Low-cost, Organic Memory, Organic capacitor, Radio Frequency IDentification(RFID), Thin-Film Transistor(TFT), VDF-TrFE(PZT/P), high field-effect mobility