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High-Speed High-Performance Vertical-Illumination Type 100% Ge-on-Si Photodetectors for Optical Data Communications
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- Authors
- In Gyoo Kim, Sanghoon Kim, Ki-Seok Jang, Jiho Joo, Gyungock Kim
- Issue Date
- 2012-07
- Citation
- Opto-Electronics and Communications Conference (OECC) 2012, pp.527-528
- Language
- English
- Type
- Conference Paper
- Abstract
- We present a high-speed high-responsivity vertical-illumination-type 100% Ge-on-Si photodetector (PD) based on silicon photonics technology. At {\\lambda}=1550nm, the fabricated germanium photodetectors exhibit the responsivity of 0.92A/W, 0.73 A/W, and 0.45A/W for the data rate of 10Gbps, 25Gbps and 40Gbps, respectively. The devices show the -3dB bandwidth (f -3dB) up to 45GHz, and display good eye-openings up to 50Gbps data transmission. These results indicate the readiness of the Ge-on-Si PD for optical network communication applications. © 2012 IEEE.
- KSP Keywords
- Data transmission, Ge-on-Si, Germanium photodetector, High Speed, High performance, Illumination type, Network Communication, Optical networks, Si photodetector, Silicon photonics technology, Type 1