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Journal
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2010 |
Traffic-Reduced Precise Ranging Protocol for Asynchronous UWB Positioning Networks
Mi-Kyung Oh
IEEE Communications Letters, v.14, no.5, pp.432-434 |
4 |
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Journal
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2010 |
Linear Characteristics of a Metal-Insulator Transition Voltage and Oscillation Frequency in VO2 Devices
Bong-Jun Kim
IEEE Electron Device Letters, v.31, no.11, pp.1314-1316 |
11 |
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Journal
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2010 |
A Phased Array Antenna Using Ferroelectric CPW Phase Shifter Active Modules
Han-Cheol Ryu
Ferroelectrics, v.407, no.1, pp.45-53 |
2 |
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Journal
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2010 |
Phase-Change Memory Device Fabricated Using Solid-State Alloying
S.-Y. Lee Electronics Letters, v.46, no.9, pp.652-654 |
5 |
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Journal
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2010 |
High-Performance Polycrystalline Silicon TFT on the Structure of a Dopant-Segregated Schottky-Barrier Source/Drain
Sung-Jin Choi
IEEE Electron Device Letters, v.31, no.3, pp.228-230 |
15 |
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Journal
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2010 |
Dual-Band Transformer Resonator Oscillator with Common-Mode Gain Control
S.-J. Yun
Electronics Letters, v.46, no.9, pp.655-657 |
0 |
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Journal
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2010 |
VO2 Thin-Film Varistor Based on Metal-Insulator Transition
Bong-Jun Kim
IEEE Electron Device Letters, v.31, no.1, pp.14-16 |
23 |
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Journal
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2010 |
Trade-Off of Multiplexing Streams in MIMO Broadcast Channels
Seung-Hwan Lee
IEEE Communications Letters, v.14, no.2, pp.115-117 |
3 |
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Journal
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2009 |
Antireflection Properties of Al2O3 and AlxTi1-xOy Films on ZnO:Ga Coated Si Wafer for Thin-Film Solar Cell
Jung Wook Lim
Electrochemical and Solid-State Letters, v.13, no.2, pp.G17-G20 |
5 |
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Journal
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2010 |
Flexible Resistive Switching Memory Device Based on Graphene Oxide
Seul Ki Hong IEEE Electron Device Letters, v.31, no.9, pp.1005-1007 |
170 |
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