Subjects : power switching device
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Conference | 2016 | Characteristic of Schottky Barrier Diode on AlGaN/GaN using Mo-based Ohmic Contact Kim Zin-Sig 대한전자공학회 종합 학술 대회 (하계) 2016, pp.400-403 |
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