Subjects : Corner rounding
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2010 | High-Density Nano-Scale N-Channel Trench-Gated MOSFETs Using the Self-Aligned Technique Kim Sang Gi Journal of the Korean Physical Society, v.57, no.4, pp.802-805 | 3 | 원문 |
| Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
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| Type | Year | Research Project | Primary Investigator | Download |
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