Subjects : High doping concentration
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2015 | High-Voltage 4H-SiC Trench MOS Barrier Schottky Rectifier with Low Forward Voltage Drop Using Enhanced Sidewall Layer Cho Doo Hyung Japanese Journal of Applied Physics, v.54, no.12, pp.1-5 | 6 | 원문 |
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| Type | Year | Research Project | Primary Investigator | Download |
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