Subjects : Metal-induced lateral
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2009 | Fabrication of n-type Schottky barrier thin-film transistor with channel length and width of 0.1 μm and erbium silicide source/drain Yang Jong-Heon Thin Solid Films, v.517, no.5, pp.1825-1828 | 5 | 원문 |
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| Type | Year | Research Project | Primary Investigator | Download |
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