Subjects : Nitride passivation
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2011 | Dependences of the Characteristics of an InGaP/GaAs HBT for Applications in Power Amplifiers on the Structural Parameters Min Byoung-Gue Journal of the Korean Physical Society, v.59, no.21, pp.435-438 | 2 | 원문 |
| Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
|---|---|---|---|---|---|
| No search results. | |||||
| Type | Year | Research Project | Primary Investigator | Download |
|---|---|---|---|---|
| No search results. | ||||