Subjects : Direct wafer bonding
Type | Year | Title | Cited | Download |
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Conference | 2024 | Highly efficient vertical outgassing channel technique for direct wafer bonding and III-V membrane regrowth Park Honghwi 한국반도체 학술대회 (KCS) 2024, pp.1-3 |
Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
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Type | Year | Research Project | Primary Investigator | Download |
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