Subjects : interface modification
Type | Year | Title | Cited | Download |
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Journal | 2012 | Remarkable Enhancement of Hole Transport in Top‐Gated N‐Type Polymer Field‐Effect Transistors by a High‐k Dielectric for Ambipolar Electronic Circuits Kang-Jun Baeg Advanced Materials, v.24, no.40, pp.5433-5439 | 182 | 원문 |
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