Subjects : trend of increasing
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2019 | 2.32 kV Breakdown Voltage Lateral β-Ga2O3 MOSFETs with Source-Connected Field Plate Mun Jae Kyoung ECS Journal of Solid State Science and Technology, v.8, no.7, pp.3079-3082 | 118 | 원문 |
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