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Subjects : SiGe heterojunction bipolar transistor

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Journal 2003 Effects of high-dose BF2+ implantation on the formation of Ti-germanosilicide on polycrystalline Si/Si0.87Ge0.13/Si layers   Park Chan Woo  Journal of Vacuum Science and Technology B, v.21, no.5, pp.2193-2197 3 원문
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