Subjects : SiGe heterojunction bipolar transistor
Type | Year | Title | Cited | Download |
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Journal | 2003 | Effects of high-dose BF2+ implantation on the formation of Ti-germanosilicide on polycrystalline Si/Si0.87Ge0.13/Si layers Park Chan Woo Journal of Vacuum Science and Technology B, v.21, no.5, pp.2193-2197 | 3 | 원문 |
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