Subjects : Gate oxide thickness
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2006 | Ambipolar Carrier Injection Characteristics of Erbium-Silicided n-Type Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors Jang Moon Gyu Japanese Journal of Applied Physics, v.45, no.2A, pp.730-732 | 32 | 원문 |
| Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
|---|---|---|---|---|---|
| No search results. | |||||
| Type | Year | Research Project | Primary Investigator | Download |
|---|---|---|---|---|
| No search results. | ||||