Subjects : Wet chemical etching
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2017 | Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing Hyung Sup Yoon Journal of the Korean Physical Society, v.71, no.6, pp.360-364 | 2 | 원문 |
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| Type | Year | Research Project | Primary Investigator | Download |
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