Subjects : Technology CAD
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2016 | Surface Al Doping of 4H-SiC Via Low Temperature Annealing Junbo Park Applied Physics Letters, v.109, no.3, pp.1-5 | 5 | 원문 |
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| Type | Year | Research Project | Primary Investigator | Download |
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