Subjects : read margin (RM)
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2012 | Nitrogen doping effect in Ag-SbTe solid electrolyte for programmable metallisation cell memory Park Young Sam Electronics Letters, v.48, no.8, pp.458-460 | 3 | 원문 |
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| Type | Year | Research Project | Primary Investigator | Download |
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