Subjects : 51 V
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2015 | Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning Cho Sung Haeng IEEE Transactions on Electron Devices, v.62, no.11, pp.3653-3657 | 38 | 원문 |
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