Subjects : atomic diffusion
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2015 | Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers 박준용 Scientific Reports, v.5, pp.1-5 | 34 | 원문 |
| Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
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| Type | Year | Research Project | Primary Investigator | Download |
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