Subjects : minimal change
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2024 | Wide process temperature of atomic layer deposition for In2 O3 thin-film transistors using novel indium precursor (N,N′-di-tert butylacetimidamido)dimethyllindium Juhun Lee Nanotechnology, v.35, no.37, pp.1-9 | 1 | 원문 |
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