Subjects : 900 V
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Conference | 2020 | 30 A / 900 V AlGaN/GaN-on-Si Double-Packaged Schottky Barrier Diodes with Controlled Passivation Edge Jeho Na International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2020, pp.1-1 |
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| Type | Year | Research Project | Primary Investigator | Download |
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