Subjects : Step growth
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2020 | High quality GaAs epitaxially grown on Si(001) substrate through AlAs nucleation and thermal cycle annealing Young-Ho Ko Solid-State Electronics, v.166, pp.1-5 | 5 | 원문 |
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| Type | Year | Research Project | Primary Investigator | Download |
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