Subjects : Er diffusion
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2009 | Characteristics of Metal-Oxide-Semiconductor (MOS) Device with Er Metal Gate on SiO2 Film 최철종 Microelectronics Reliability, v.49, no.4, pp.463-465 | 2 | 원문 |
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