Subjects : Boron concentration
| Type | Year | Title | Cited | Download |
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| Conference | 2013 | A Novel Super-Junction Trench Gate MOSFET Fabricated Using High Aspect-Ratio Trench Etching and Boron Lateral Diffusion Technologies Kim Sang Gi International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2013, pp.233-236 | 5 | 원문 |
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| Type | Year | Research Project | Primary Investigator | Download |
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