Subjects : hBN encapsulated
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2018 | Comparison of Trapped Charges and Hysteresis Behavior in hBN Encapsulated Single MoS2 Flake based Field Effect Transistors on SiO2 and hBN Substrates 이창희 Nanotechnology, v.29, no.33, pp.1-8 | 90 | 원문 |
| Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
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| Type | Year | Research Project | Primary Investigator | Download |
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