Subjects : Nanoscale regime
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2006 | N2-Annealing Effects on Characteristics of Schottky-Barrier MOSFETS Jang Moon Gyu IEEE Transactions on Electron Devices, v.53, no.8, pp.1821-1825 | 28 | 원문 |
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