Subjects : Reverse breakdown
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Conference | 2015 | 700 V / 20 A Double AlGaN/GaN Lateral Schottky Barrier Diodes with Recessed Anode Structure on Silicon Substrate 나제호 International Conference on Nitride Semiconductors (ICNS) 2015, pp.1-2 |
| Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
|---|---|---|---|---|---|
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| Type | Year | Research Project | Primary Investigator | Download |
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