Subjects : InAlAs/InGaAs mHEMT
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2020 | A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices Min Byoung-Gue Journal of the Korean Physical Society, v.77, no.2, pp.122-126 | 4 | 원문 |
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| Type | Year | Research Project | Primary Investigator | Download |
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