Subjects : radio frequency (RF) performance
Type | Year | Title | Cited | Download |
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Journal | 2020 | Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer Sungjae Chang Nanomaterials, v.10, no.11, pp.1-11 | 11 | 원문 |
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