Subjects : In-diffusion
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2008 | A Two-step Annealing Process for Ni Silicide Formation in an Ultra-thin Body RF SOI MOSFET Chang-Geun Ahn Materials Science and Engineering B, v.147, no.2-3, pp.183-186 | 4 | 원문 |
| Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
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| Type | Year | Research Project | Primary Investigator | Download |
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