Subjects : hole trapping
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2018 | Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric Maruf A. Bhuiyan IEEE Transactions on Nuclear Science, v.65, no.1, pp.46-52 | 25 | 원문 |
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| Type | Year | Research Project | Primary Investigator | Download |
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