Subjects : hysteresis phenomenon
Type | Year | Title | Cited | Download |
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Journal | 2020 | Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors Kang Soo Cheol Nanomaterials, v.10, no.11, pp.1-9 | 5 | 원문 |
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