Subjects : phosphorous-doped
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2008 | Schottky Barrier N-Type Thin Film Transistors With Polycrystalline Silicon Channel and Er-Silicided Metallic Junctions 신진욱 IEEE Electron Device Letters, v.29, no.12, pp.1336-1339 | 4 | 원문 |
| Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
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| Type | Year | Research Project | Primary Investigator | Download |
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