Subjects : Heterostructure devices
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2013 | Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures 이관형 ACS Nano, v.7, no.9, pp.7931-7936 | 1019 | 원문 |
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