Subjects : Crystal plane
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2021 | In situ implementation of silicon epitaxial layer on amorphous SiO2 using reduced-pressure chemical vapor deposition Kim Sang Hoon Applied Materials Today, v.24, pp.1-7 | 8 | 원문 |
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| Type | Year | Research Project | Primary Investigator | Download |
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