Subjects : Degradation factor
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2019 | Improvement of Proton Radiation Hardness Using ALD-Deposited Al2O3 Gate Insulator in GaN-Based MIS-HEMTs Sungjae Chang ECS Journal of Solid State Science and Technology, v.8, no.12, pp.245-248 | 11 | 원문 |
| Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
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| Type | Year | Research Project | Primary Investigator | Download |
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