Subjects : Leakage Current Reduction
Type | Year | Title | Cited | Download |
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Journal | 2024 | The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors Junhyung Kim ELECTRONICS, v.13, no.20, pp.1-8 | 0 | 원문 |
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