Subjects : Forming gas anneal
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2026 | Hydrogen-Stable Top-Gate Self-Aligned a-IGZO TFT With Tungsten Nitride Barrier on Source/Drain 김희태 IEEE Electron Device Letters, v.47, no.1, pp.96-99 | 0 | 원문 |
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