Subjects : size dependence
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2024 | Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN highelectron-mobility transistors for X-band applications Sungjae Chang ETRI Journal, v.46, no.6, pp.1090-1102 | 4 | 원문 |
| Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
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| Type | Year | Research Project | Primary Investigator | Download |
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