Subjects : turn-on threshold voltage
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2020 | Effects of Recess Depth Under the Gate Area on the V th-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.20, no.7, pp.4170-4175 | 원문 | |
| Journal | 2018 | Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures Kim Zin-Sig Solid-State Electronics, v.140, pp.12-17 | 9 | 원문 |
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| Type | Year | Research Project | Primary Investigator | Download |
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