Subjects : Digital etch
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2018 | DC and RF Characteristics of Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated by Shallow Recess Combined with Fluorine-Treatment and Deep Recess Jung Hyunwook ECS Journal of Solid State Science and Technology, v.7, no.4, pp.197-200 | 2 | 원문 |
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| Type | Year | Research Project | Primary Investigator | Download |
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