Subjects : Time to Breakdown
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2003 | A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing Kim Jongdae IEEE Transactions on Electron Devices, v.50, no.2, pp.378-383 | 5 | 원문 |
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| Type | Year | Research Project | Primary Investigator | Download |
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