Subjects : Operating region
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2009 | Enhanced Memory Behavior in Phase-Change Nonvolatile-Memory Devices Using Multilayered Structure of Compositionally Modified Ge–Sb–Te Films Yoon Sung Min Japanese Journal of Applied Physics, v.48, no.4, pp.1-6 | 2 | 원문 |
| Journal | 2007 | Nanoscale Observations of the Operational Failure for Phase-change-type Nonvolatile Memory Devices using Ge2Sb2Te5 Chalcogenide Thin Films Yoon Sung Min Applied Surface Science, v.254, no.1, pp.316-320 | 51 | 원문 |
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| Type | Year | Research Project | Primary Investigator | Download |
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