Registered AVALANCHE PHOTODIODES AND METHODS OF FABRICATING THE SAME

Inventors

Miran Park, Kwon O-Kyun

Application No.

14220431 (2014.03.20)

Publication No.

20140206130 (2014.07.24)

Registration No.

8999744 (2015.04.07)

Country

UNITED STATES

Project Code

09MB2500, Development of optical component technologies for advanced FTTH, Dae Kon Oh

Abstract

Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate through a metal organic chemical vapor deposition process.

KSP Keywords

Absorption layer, Avalanche photo diode(APD), Chemical Vapor Deposition, Chemical vapor deposition process, Conductive layer, Metal-Organic, Metalorganic chemical vapor deposition, Organic chemical, Wet etch, chemical vapor, compound semiconductor, deposition process, n-Type, n-type substrate, p-Type, vapor deposition

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Status	Patent	Country	KIPRIS
Registered	AVALANCHE PHOTODIODES HAVING ACCURATE AND REPRODUCTIBLE AMPLIFICATION LAYER	UNITED STATES