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Detail
Registered AVALANCHE PHOTODIODES HAVING ACCURATE AND REPRODUCTIBLE AMPLIFICATION LAYER
- Inventors
- Miran Park, Kwon O-Kyun
- Application No.
- 13191758 (2011.07.27)
- Publication No.
- 20120104531 (2012.05.03)
- Registration No.
- 8710546 (2014.04.29)
- Country
- UNITED STATES
- Project Code
- 09MB2500, Development of optical component technologies for advanced FTTH, Dae Kon Oh
- Abstract
- Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate through a metal organic chemical vapor deposition process.
- Family
| Status | Patent | Country | KIPRIS |
|---|---|---|---|
| Registered | 애벌런치 광다이오드 및 그 형성방법 | KOREA | KIPRIS |
| Registered | AVALANCHE PHOTODIODES AND METHODS OF FABRICATING THE SAME | UNITED STATES |