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Registered AVALANCHE PHOTODIODES HAVING ACCURATE AND REPRODUCTIBLE AMPLIFICATION LAYER

애벌런치 광다이오드 및 그 형성 방법
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Inventors
Miran Park, Kwon O-Kyun
Application No.
13191758 (2011.07.27)
Publication No.
20120104531 (2012.05.03)
Registration No.
8710546 (2014.04.29)
Country
UNITED STATES
Project Code
09MB2500, Development of optical component technologies for advanced FTTH, Dae Kon Oh
Abstract
Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate through a metal organic chemical vapor deposition process.
KSP Keywords
Absorption layer, Avalanche photo diode(APD), Chemical Vapor Deposition, Chemical vapor deposition process, Conductive layer, Metal-Organic, Metalorganic chemical vapor deposition, N-type, Organic chemical, chemical vapor, compound semiconductor, deposition process, n-type substrate, p-Type, vapor deposition, wet etch
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Status Patent Country KIPRIS
Registered 애벌런치 광다이오드 및 그 형성방법 KOREA KIPRIS
Registered AVALANCHE PHOTODIODES AND METHODS OF FABRICATING THE SAME UNITED STATES