Registered
AVALANCHE PHOTODIODES HAVING ACCURATE AND REPRODUCTIBLE AMPLIFICATION LAYER
- Inventors
-
Miran Park, Kwon O-Kyun
- Application No.
-
13191758 (2011.07.27)
- Publication No.
-
20120104531 (2012.05.03)
- Registration No.
- 8710546 (2014.04.29)
- Country
- UNITED STATES
- Project Code
-
09MB2500, Development of optical component technologies for advanced FTTH,
Dae Kon Oh
- Abstract
- Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate through a metal organic chemical vapor deposition process.
- KSP Keywords
- Absorption layer, Avalanche photo diode(APD), Chemical Vapor Deposition, Chemical vapor deposition process, Conductive layer, Metal-Organic, Metalorganic chemical vapor deposition, N-type, Organic chemical, chemical vapor, compound semiconductor, deposition process, n-type substrate, p-Type, vapor deposition, wet etch
- Family
-