Registered SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Inventors

Jong-Won Lim, Hokyun Ahn, Eun Soo Nam, Woojin Chang, Dong Min Kang, Hae Cheon Kim

Application No.

13274367 (2011.10.17)

Publication No.

20120146107 (2012.06.14)

Registration No.

8609474 (2013.12.17)

Country

UNITED STATES

Project Code

10ZB1100, Development support for customer-based convergence components, Eun Soo Nam

Abstract

Disclosed are a semiconductor device and a method of manufacturing the same. In the semiconductor device according to an exemplary embodiment of the present disclosure, at the time of forming a source electrode, a drain electrode, a field plate electrode, and a gate electrode on a substrate having a heterojunction structure such as AlGaN/GaN, the field plate electrode made of the same metal as the gate electrode is formed on the side surface of a second support part positioned below a head part of the gate electrode so as to prevent the gate electrode from collapsing and improve high-frequency and high-voltage characteristic of the semiconductor device.

KSP Keywords

Drain electrode, Field plate, High Voltage, High frequency(HF), Second support, Support part, gate electrode, heterojunction structure, semiconductor device

Family

 

패밀리 특허 목록

Status	Patent	Country	KIPRIS
Registered	반도체 소자 및 이의 제조방법	KOREA	KIPRIS