Registered SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Inventors

Min Byoung-Gue, Eun Soo Nam, Sang Choon Ko, Hokyun Ahn, Jong-Won Lim, Hyung Sup Yoon, Mun Jae Kyoung

Application No.

14021269 (2013.09.09)

Publication No.

20140103539 (2014.04.17)

Registration No.

9159612 (2015.10.13)

Country

UNITED STATES

Project Code

12VB1500, Energy Efficient Power Semiconductor Technology for Next Generation Data Center, Eun Soo Nam

Abstract

A semiconductor device may include a substrate having a lower via-hole, an epitaxial layer having an opening exposing a top surface of the substrate, a semiconductor chip disposed on the top surface of the substrate and including first, second, and third electrodes, an upper metal layer connected to the first electrode, a supporting substrate disposed on the upper metal layer and having an upper via-hole, an upper pad disposed on the substrate and extending into the upper via-hole, a lower pad connected to the second electrode in the opening, and a lower metal layer covering a bottom surface of the substrate and connected to the lower pad through the lower via-hole.

KSP Keywords

Bottom surface, Epitaxial layer, Semiconductor chip, Via-hole, metal layer, semiconductor device

Family

 

패밀리 특허 목록

Status	Patent	Country	KIPRIS
Registered	반도체 장치 및 그 제조방법	KOREA	KIPRIS
Registered	SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME	UNITED STATES