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Registered SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

후면 비아홀이 있는 반도체 장치 및 그 제작 방법
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Inventors
Min Byoung-Gue, Mun Jae Kyoung, Jong-Won Lim, Hyung Sup Yoon, Hokyun Ahn, Sang Choon Ko, Eun Soo Nam
Application No.
14845435 (2015.09.04)
Publication No.
20150380354 (2015.12.31)
Registration No.
9490214 (2016.11.08)
Country
UNITED STATES
Project Code
12VB1500, Energy Efficient Power Semiconductor Technology for Next Generation Data Center, Eun Soo Nam
Abstract
A semiconductor device may include a substrate having a lower via-hole, an epitaxial layer having an opening exposing a top surface of the substrate, a semiconductor chip disposed on the top surface of the substrate and including first, second, and third electrodes, an upper metal layer connected to the first electrode, a supporting substrate disposed on the upper metal layer and having an upper via-hole, an upper pad disposed on the substrate and extending into the upper via-hole, a lower pad connected to the second electrode in the opening, and a lower metal layer covering a bottom surface of the substrate and connected to the lower pad through the lower via-hole.
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Status Patent Country KIPRIS
Registered Semiconductor device And Method Of Fabricating The Same KOREA KIPRIS
Registered SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME UNITED STATES