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Detail
Registered SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Inventors
- Min Byoung-Gue, Eun Soo Nam, Jong-Won Lim, Hyung Sup Yoon, Sang Choon Ko, Mun Jae Kyoung, Hokyun Ahn
- Application No.
- 14845435 (2015.09.04)
- Publication No.
- 20150380354 (2015.12.31)
- Registration No.
- 9490214 (2016.11.08)
- Country
- UNITED STATES
- Project Code
- 12VB1500, Energy Efficient Power Semiconductor Technology for Next Generation Data Center, Eun Soo Nam
- Abstract
- A semiconductor device may include a substrate having a lower via-hole, an epitaxial layer having an opening exposing a top surface of the substrate, a semiconductor chip disposed on the top surface of the substrate and including first, second, and third electrodes, an upper metal layer connected to the first electrode, a supporting substrate disposed on the upper metal layer and having an upper via-hole, an upper pad disposed on the substrate and extending into the upper via-hole, a lower pad connected to the second electrode in the opening, and a lower metal layer covering a bottom surface of the substrate and connected to the lower pad through the lower via-hole.
- KSP Keywords
- Bottom surface, Epitaxial layer, Semiconductor chip, Via-hole, metal layer, semiconductor device
- Family
| Status | Patent | Country | KIPRIS |
|---|---|---|---|
| Registered | Semiconductor device And Method Of Fabricating The Same | KOREA | KIPRIS |
| Registered | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | UNITED STATES |